
Looks like SanDisk is at it again when it comes to improving their already stellar products. They’re pursuing a way to create 3D memory device technology that may one day replace the flash drives all use today. This is pretty interesting, we’ll see how this goes in the near future.
SANTA CLARA, Calif. — At the Flash Memory Summit, SanDisk Corp.’s top executive provided more details about its efforts to devise a rewriteable 3-D memory device–a technology that could replace today’s flash parts.
SanDisk is developing the technology with its NAND flash partner, Toshiba Corp. The companies recently announced plans to devise rewriteable 3-D memory.
This appears to advance SanDisk’s one-time programmable 3-D technology, which was obtained through the acquisition of Matrix Semiconductor Inc. in 2005. Matrix had been developing a one-time programmable antifuse-based memory.
In a brief interview, Eli Harari, chairman and chief executive of SanDisk, said the company hopes to move beyond the fuse-based technology. Instead, SanDisk is looking to devise ”3-D diode memory arrays,” which are based on a 4F2 architecture, he said during a presentation.
The arrays would make use of a switching element, which could be in the form of phase-change memory or resistive RAM (RRAM), he said. The technology would be ideal for the 32-nm ”half-pitch” node, he said.
“Flash and 3-D is the place to be in the coming decade,” he added. Toshiba and others have also announced various 3-D device technologies as well.
-Ray
[Source: pldesignline]